elektronische bauelemente 2sd2114 0.5a , 25v npn plastic-encapsulate transistor 24-feb-2011 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free feature high dc current gain. high emitter-base voltage. v ebo =12v (min.) classification of h fe product-rank 2sd2114-v 2sd2114-w range 820~1800 1200~2700 marking bbv bbw package information package mpq leadersize sot-23 3k 7 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 12 v collector current - continuous i c 500 ma collector power dissipation p c 250 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 25 - - v i c =10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 20 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 12 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 0.5 a v cb =20v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =10v, i c =0 dc current gain h fe 820 - 2700 v ce =3v, i c =10ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =500ma, i b =20ma transition frequency f t - 350 - mhz v ce =10v, i c =50ma, f=100mhz collector output capacitance c ob - 8 - pf v cb =10v, i e =0, f=1mhz on resistance r (on) - 0.8 - v in =0.1v(rms), i b =1ma, f=1kh z sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
elektronische bauelemente 2sd2114 0.5a , 25v npn plastic-encapsulate transistor 24-feb-2011 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente 2sd2114 0.5a , 25v npn plastic-encapsulate transistor 24-feb-2011 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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